Array substrate and display device and method for making the array substrate

ABSTRACT

An array substrate includes a substrate, driving TFTs, and switch TFTs directly on the substrate. The driving TFT includes a buffer layer, a gate, a first gate insulator layer, a second gate insulator layer, and a metal oxide semiconductor layer stacked in that order on the substrate, and a source electrode and a drain electrode coupled to the metal oxide semiconductor layer. The switch TFT includes a buffer layer, a gate, a second gate insulator layer, and a metal oxide semiconductor layer stacked in that order on the substrate, and a source electrode and a drain electrode coupled to the metal oxide semiconductor layer.

FIELD

The subject matter herein generally relates to an array substrate, adisplay device having the array substrate, and method for making thearray substrate, more particularly to an array substrate for an organiclight emitting diode (OLED) display device.

BACKGROUND

Two common kinds of display devices are a liquid crystal display (LCD)device and an OLED display device. The OLED display device usuallyincludes a substrate, a pixel array, and a driving circuit formed on thesubstrate. The OLED fabrication process is prone to damage from the hightemperature fabrication process which results in degradation in displayperformance and quality. Furthermore, there is room for improvement indisplay, operation, and luminance of an OLED device.

BRIEF DESCRIPTION OF THE DRAWINGS

Implementations of the present technology will now be described, by wayof example only, with reference to the attached figures.

FIG. 1 is a plan view of an array substrate.

FIG. 2 is a circuit diagram of a pixel unit of FIG. 1.

FIG. 3 is a cross-sectional view of a first exemplary embodiment of anarray substrate.

FIG. 4 is a flow chart of a method for making the array substrate ofFIG. 3.

FIG. 5 illustrates a step for manufacturing the array substrate of FIG.3 at block 601 of FIG. 4.

FIG. 6 illustrates a step for manufacturing the array substrate of FIG.3 at block 603 of FIG. 4.

FIG. 7 illustrates a step for manufacturing the array substrate of FIG.3 at block 605 of FIG. 4.

FIG. 8 illustrates a step for manufacturing the array substrate of FIG.3 at block 607 of FIG. 4.

FIG. 9 illustrates a step for manufacturing the array substrate of FIG.3 at block 609 of FIG. 4.

FIG. 10 illustrates a step for manufacturing the array substrate of FIG.3 at block 611 of FIG. 4.

FIG. 11 is a cross-sectional view of a second exemplary embodiment of anarray substrate.

FIG. 12 is a cross-sectional view of a third exemplary embodiment of anarray substrate.

DETAILED DESCRIPTION

It will be appreciated that for simplicity and clarity of illustration,where appropriate, reference numerals have been repeated among thedifferent figures to indicate corresponding or analogous elements. Inaddition, numerous specific details are set forth in order to provide athorough understanding of the embodiments described herein. However, itwill be understood by those of ordinary skill in the art that theembodiments described herein can be practiced without these specificdetails. In other instances, methods, procedures, and components havenot been described in detail so as not to obscure the related relevantfeature being described. Also, the description is not to be consideredas limiting the scope of the embodiments described herein. The drawingsare not necessarily to scale and the proportions of certain parts havebeen exaggerated to better illustrate details and features of thepresent disclosure.

Several definitions that apply throughout this disclosure will now bepresented.

The term “coupled” is defined as connected, whether directly orindirectly through intervening components, and is not necessarilylimited to physical connections. The connection can be such that theobjects are permanently connected or releasably connected. The term“comprising,” when utilized, means “including, but not necessarilylimited to”; it specifically indicates open-ended inclusion ormembership in the so-described combination, group, series, and the like.

FIG. 1 illustrates a display device 1000. The display device 1000 is anOLED display device and comprises an array substrate 100. The arraysubstrate 100 comprises a substrate 10, a pixel array 20, and a drivingcircuit 30. The pixel array 20 and the driving circuit 30 are formed onthe substrate 10. The substrate 10 can be made of a material which iscommonly used, such as glass, quartz, or flexible material. The pixelarray 20 is configured to display images and comprises a plurality ofpixel units 22 arranged in rows and columns. The driving circuit 30comprises at least one gate driver 38 and at least one source driver 36.The driving circuit 30 comprises one or more thin film transistorsformed on the substrate 10. The array substrate 100 is a hybrid thinfilm transistor (TFT) array substrate, and comprises low-temperaturepoly-silicon TFTs and metal oxide TFTs formed on the substrate 10.

FIG. 2 illustrates an equivalent circuit diagram of one of the pixelunits 22. Each pixel unit 22 comprises a light emitting diode 221, adriving TFT 222, a switch TFT 223, and a capacitor C. The switch TFT 223is electrically connected between the driving circuit 30 (shown as inFIG. 1) and the driving TFT 222 to switch the driving TFT 222 on or off.The driving TFT 222 is electrically connected between a power source VDDand the light emitting diode 221. The capacitor C is a storage capacitorand is electrically connected between a gate electrode of the drivingTFT 222 and a drain electrode of the driving TFT 222. The capacitor C isconfigured to control an electrical current of the driving TFT 222, thusthe driving TFT 222 can control a luminance of the light emitting diode221. The driving TFT 222 is a metal oxide TFT. In this embodiment, asub-threshold swing of the driving TFT 222 is larger than that of theswitch TFT 223, which is obtained by adjusting the thicknesses of gateinsulator layers in the driving TFT 222 and the switch TFT 223. Thesub-threshold swing indicates the increment of applied voltage to thegate electrode for increasing electrical current of the drain electrodeby one order of magnitude.

FIG. 3 illustrates a cross-sectional view of a first embodiment of thearray substrate 100 in part. The array substrate 100 comprises aplurality of poly-silicon TFTs 31, a plurality of switch TFTs 223, and aplurality of driving TFTs 222. FIG. 3 only shows one poly-silicon TFT31, one switch TFT 223, and one driving TFT 222. The poly-silicon TFTs31 may be included in the driving circuit 30 as switches to power on orpower off the gate driver 38 and the source driver 36, and thepoly-silicon TFTs 31 may also be included in the pixel units 22.

The light emitting diode 221 comprises an anode (not shown), a cathode(not shown), and light-emitting material (not shown) between the anodeand the cathode. The anode is electrically coupled to the drainelectrode of the driving TFT 222. The array substrate 100 furthercomprises dielectric layers (not shown) and a planar layer 90. Thedielectric layers are formed on opposite sides of the light-emittingmaterial. The planar layer 90 forms a top of the array substrate 100.

In this embodiment, the poly-silicon TFTs 31 are low-temperaturepoly-silicon TFTs, the switch TFTs 223 are metal oxide TFTs, and thedriving TFTs 222 are metal oxide TFTs.

Each poly-silicon TFT 31 comprises a poly-silicon semiconductor layer301, a buffer layer 303, a gate electrode 305, a first gate insulatorlayer 307, a second gate insulator layer 308, a source electrode 309,and a drain electrode 311. The poly-silicon semiconductor layer 301, thebuffer layer 303, the gate electrode 305, the first gate insulator layer307, and the second gate insulator layer 308 are stacked on thesubstrate 10 in that order. A first through hole 313 and a secondthrough hole 315 passing through the buffer layer 303, the first gateinsulator layer 307, and the second gate insulator layer 308 are thereindefined. The source electrode 309 is formed on the second gate insulatorlayer 308 and extends through the first through hole 313 to couple tothe poly-silicon semiconductor layer 301. The drain electrode 311 isformed on the second gate insulator layer 308 and extends through thesecond through hole 315 to couple to the poly-silicon semiconductorlayer 301.

Each driving TFT 222 comprises a buffer layer 403, a gate electrode 405,a first gate insulator layer 407, a second gate insulator layer 408, asource electrode 409, a drain electrode 411, and a metal oxidesemiconductor layer 413. The buffer layer 403, the gate electrode 405,the first gate insulator layer 407, the second gate insulator layer 408,and the metal oxide semiconductor layer 413 are stacked on the substrate10 in that order. The source electrode 409 and the drain electrode 411are defined by a single layer and are positioned at opposite sides ofthe metal oxide semiconductor layer 413. The metal oxide semiconductorlayer 413 is coupled to the source electrode 409 and the drain electrode411. The metal oxide semiconductor layer 413 may be made of indiumgallium zinc oxide (IGZO), zinc oxide, indium oxide, or gallium oxide.

Each switch TFT 223 comprises a buffer layer 503, a gate electrode 505,a second gate insulator layer 508, a source electrode 509, a drainelectrode 511, and a metal oxide semiconductor layer 513. The bufferlayer 503, the gate electrode 505, the second gate insulator layer 508,and the metal oxide semiconductor layer 513 are stacked on the substrate10 in that order. The source electrode 509 and the drain electrode 511are defined by a single layer and are positioned at opposite sides ofthe metal oxide semiconductor layer 513. The metal oxide semiconductorlayer 513 is coupled to the source electrode 509 and the drain electrode511. The metal oxide semiconductor layer 513 may be made of IGZO, zincoxide, indium oxide, or gallium oxide.

In this embodiment, the buffer layer 303, the buffer layer 403, and thebuffer layer 503 are defined by a single layer and are formed by asingle process. The first gate insulator layer 307 and the first gateinsulator layer 407 are defined by a single layer and are formed by asingle process. The second gate insulator layer 308, the second gateinsulator layer 408, and the second gate insulator layer 508 are definedby a single layer and are formed by a single process. The first gateinsulator layer 307 and the first gate insulator layer 407 are made ofsilicon nitride; and the second gate insulator layer 308, the secondgate insulator layer 408, and the second gate insulator layer 508 aremade of silicon oxide. Alternatively, the first gate insulator layer 307and the first gate insulator layer 407 can be made of silicon oxide; andthe second gate insulator layer 308, the second gate insulator layer408, and the second gate insulator layer 508 can be made of siliconnitride.

FIG. 4 illustrates a flow chart of an exemplary method for making thearray substrate 100 shown in FIG. 3. The method is provided by way ofexample, as there are a variety of ways for carrying out the method.Each block shown in FIG. 4 represents one or more processes, methods, orsubroutines, carried out in the exemplary method. The exemplary methodcan begin at block 601.

At block 601, a poly-silicon semiconductor layer 301 is formed on asubstrate 10, as shown FIG. 5. The process of forming the poly-siliconsemiconductor layer 301 on the substrate 10 may comprise depositing anamorphous silicon layer, annealing, and ion doping the amorphous siliconlayer. The substrate 10 can be made of a material which is commonlyused, such as glass, quartz, or other flexible material.

At block 603, as shown in FIG. 6, a buffer layer 303, a buffer layer403, and a buffer layer 503 are formed on the substrate 10. A gate 305is then formed on the buffer layer 303, a gate 405 is formed on thebuffer layer 403, and a gate 505 is formed on the buffer layer 503. Thebuffer layer 303 covers the poly-silicon semiconductor layer 301. Thebuffer layer 303, the buffer layer 403, and the buffer layer 503 aremade of an electrically insulative material. An electrically insulativematerial is deposited or coated on the substrate 10 to form the bufferlayer 303, the buffer layer 403, and the buffer layer 503. The processof forming the gate 305, the gate 405, and the gate 505 on the substrate10 may comprise depositing a first metal layer on the buffer layer 303,the buffer layer 403, and the buffer layer 503, and etching andpatterning the first metal layer to form the gate 305, the gate 405, andthe gate 505. The metal layer can be made of an electrically conductivemetal, such as molybdenum (Mo), aluminum (Al), chromium (Cr), copper(Cu), or neodymium (Nd). The etching process can be a photolithographicetching process.

At block 605, as shown in FIG. 7, a first gate insulator layer 307 and afirst gate insulator layer 407 are formed. The process of forming firstgate insulator layer 307 and the first gate insulator layer 407 maycomprise depositing a first insulator layer on the substrate 10, thegate 305, the gate 405, and the gate 505, and removing a portion of theinsulator layer which covers the gate 505. The first insulator layer ismade of silicon nitride or silicon oxide. In this embodiment, the firstinsulator layer is made of silicon nitride.

At block 607, as shown in FIG. 8, a second gate insulator layer 308, asecond gate insulator layer 408, and a second gate insulator layer 508are formed, and a first through hole 313 and a second through hole 315are created to expose the poly-silicon semiconductor layer 301. Thesecond gate insulator layer 308 is formed on the first gate insulatorlayer 307, the second gate insulator layer 408 is formed on the firstgate insulator layer 407, and the second gate insulator layer 508 isformed on the buffer layer 503, and covers the gate 505. Both the firstthrough hole 313 and the second through hole 315 pass through the secondgate insulator layer 308, the first gate insulator layer 307, and thebuffer layer 303. The second insulator layer is made of silicon nitrideor silicon oxide. In this embodiment, the second insulator layer is madeof silicon oxide.

At block 609, as shown in FIG. 9, a metal oxide semiconductor layer 413and a metal oxide semiconductor layer 513 are formed. The process offorming the metal oxide semiconductor layer 413 and the metal oxidesemiconductor layer 513 may comprise depositing a metal oxide layer, andpatterning the metal oxide layer to form the metal oxide semiconductorlayer 413 and the metal oxide semiconductor layer 513. The metal oxidesemiconductor layer 413 is formed on the second gate insulator layer 408and corresponds to the gate 405. The metal oxide semiconductor layer 513is formed on the second gate insulator layer 508 and corresponds to thegate 505. Both the metal oxide semiconductor layer 413 and the metaloxide semiconductor layer 513 can be made of IGZO, zinc oxide, indiumoxide, or gallium oxide.

At block 611, as shown in FIG. 10, a source electrode 309, a sourceelectrode 409, a source electrode 509, a drain electrode 311, a drainelectrode 411, and a drain electrode 511 are formed. The process offorming the source electrode 309, the source electrode 409, the sourceelectrode 509, the drain electrode 311, the drain electrode 411, and thedrain electrode 511 may comprise depositing a second metal oxide layerand etching and patterning the second metal layer to form the sourceelectrode 309, the source electrode 409, the source electrode 509, thedrain electrode 311, the drain electrode 411, and the drain electrode511. The source electrode 309 is formed in the first through hole 313,and the drain electrode 311 is formed in the second through hole 315.The source electrode 309 and the drain electrode 311 are coupled to thepoly-silicon semiconductor layer 301. The source electrode 409 and thedrain electrode 411 are coupled to the metal oxide semiconductor layer413. The source electrode 509 and the drain electrode 511 are coupled tothe metal oxide semiconductor layer 513.

At block 613, as shown in FIG. 3, a planar layer 90 is formed to coverthe poly-silicon TFT 31, the switch TFT 223, and the driving TFT 222.The method further comprises forming an anode (not shown), a cathode(not shown), and a light-emitting material (not shown) for the lightemitting diode 221.

In this embodiment, the poly-silicon TFTs 31 are low-temperaturepoly-silicon TFTs, which can be positioned in a non-display region ofthe display device 1000. The poly-silicon TFTs 31 have high electronmobility and can improve a reaction rate of the driving circuit. Thepoly-silicon TFTs 31 have a small volume, allowing a narrowing of thenon-display region.

The switch TFT 223 comprises only one gate insulator layer and thedriving TFT 222 comprises two gate insulator layers. That is, thethicknesses of the gate insulator layers of the driving TFT 222 isgreater than that of the switch TFT 223, thus a gate capacitance of thedriving TFT 222 is less than that of the switch TFT 223, and asub-threshold swing of the driving TFT 222 is higher than that of theswitch TFT 223. Therefore, the driving TFT 222 can, with very fineprecision, control the luminance of the light emitting diode 221, andthe switch TFT 223 can reduce operating voltage and increase operatingrate of the circuit.

FIG. 11 illustrates a cross-sectional view of a second embodiment of anarray substrate (array substrate 200) in part. The array substrate 200is substantially the same as the array substrate 100, except that themetal oxide semiconductor layer 413 of the driving TFT 222 is formed onthe second gate insulator layer 408, the source electrode 409 and thedrain electrode 411, and partially covers the source electrode 409 andthe drain electrode 411. In the array substrate 100, the sourceelectrode 409 and the drain electrode 411 partially cover the metaloxide semiconductor layer 413. In the array substrate 200, the metaloxide semiconductor layer 413 is formed after the source electrode 409and the drain electrode 411 have been formed, this protects the metaloxide semiconductor layer 413 from damage during the process of formingthe source electrode 409 and the drain electrode 411.

FIG. 12 illustrates a cross-sectional view of a third embodiment of anarray substrate (array substrate 300) in part. The array substrate 300is substantially the same as the array substrate 100, except that themetal oxide semiconductor layer 413 of the driving TFT 222 is formed onthe second gate insulator layer 408, the source electrode 409, and thedrain electrode 411, and partially covers the source electrode 409 andthe drain electrode 411; and the metal oxide semiconductor layer 513 ofthe switch TFT 223 is formed on the second gate insulator layer 508, thesource electrode 509 and the drain electrode 511, and partially coversthe source electrode 509 and the drain electrode 511. In the arraysubstrate 100, the source electrode 409 and the drain electrode 411partially cover the metal oxide semiconductor layer 413; and the sourceelectrode 509 and the drain electrode 511 partially cover the metaloxide semiconductor layer 513. In the array substrate 300, the metaloxide semiconductor layer 413 is formed after the source electrode 409and the drain electrode 411 have been formed. The metal oxidesemiconductor layer 513 is formed after the source electrode 509 and thedrain electrode 511 have been formed.

The embodiments shown and described above are only examples. Manydetails are often found in the art such as other features of a displaydevice. Therefore, many such details are neither shown nor described.Even though numerous characteristics and advantages of the presenttechnology have been set forth in the foregoing description, togetherwith details of the structure and function of the present disclosure,the disclosure is illustrative only, and changes may be made in thedetail, especially in matters of shape, size, and arrangement of theparts within the principles of the present disclosure, up to andincluding the full extent established by the broad general meaning ofthe terms used in the claims. It will therefore be appreciated that theembodiments described above may be modified within the scope of theclaims.

What is claimed is:
 1. An array substrate comprising: a substrate; adriving circuit formed on the substrate; a pixel array formed on thesubstrate having a plurality of pixel units, each of the plurality ofpixel units comprising a light emitting diode, a switch TFT, and adriving TFT, the switch TFT being electrically connected between thedriving circuit and the driving TFT; and wherein the driving TFTcomprises a buffer layer, a gate, a first gate insulator layer, a secondgate insulator layer, and a metal oxide semiconductor layer stacked inthat order on the substrate, and both a source electrode and a drainelectrode coupled to the metal oxide semiconductor layer of the drivingTFT; and wherein the switch TFT comprises a buffer layer, a gate, asecond gate insulator layer, and a metal oxide semiconductor layerstacked in that order on the substrate, and a source electrode and adrain electrode both coupled to the metal oxide semiconductor layer ofthe switch TFT.
 2. The array substrate of claim 1, further comprising atleast one poly-silicon TFT, each poly-silicon TFT comprises apoly-silicon semiconductor layer, a buffer layer, a gate electrode, afirst gate insulator layer, a second gate insulator layer stacked on thesubstrate in that order, and a source electrode and a drain electrodepassing through the buffer layer, the first gate insulator layer, andthe second gate insulator layer and coupled to the poly-siliconsemiconductor layer.
 3. The array substrate of claim 2, furthercomprising a planar layer formed on and covering all of the poly-siliconTFT, the switch TFTs, and the driving TFTs.
 4. The array substrate ofclaim 2, wherein the driving circuit comprises a gate driver and asource driver, the at least one poly-silicon TFT is positioned in thedriving circuit.
 5. The array substrate of claim 2, wherein the at leastone poly-silicon TFT is positioned in at least one of the pixel units.6. The array substrate of claim 2, wherein the buffer layers of thepoly-silicon TFTs, the switch TFTs, and the driving TFTs are defined bya single layer and are formed by a single process, the first gateinsulator layers of the poly-silicon TFTs and the driving TFTs aredefined by a single layer and are formed by a single process, the secondgate insulator layers of the poly-silicon TFTs, the switch TFTs, and thedriving TFTs are defined by a single layer and are formed by a singleprocess.
 7. The array substrate of claim 1, wherein the metal oxidesemiconductor layer of the driving TFT partially covers the sourceelectrode and the drain electrode of the driving TFT.
 8. The arraysubstrate of claim 1, wherein the metal oxide semiconductor layer of theswitch TFT partially covers the source electrode and the drain electrodeof the switch TFT.
 9. A display device comprising: an array substratecomprising: a substrate; a driving circuit on the substrate; a pixelarray on the substrate having a plurality of pixel units, each of theplurality of pixel units comprising a light emitting diode, a switchTFT, and a driving TFT, the switch TFT being electrically connectedbetween the driving circuit and the driving TFT; and wherein the drivingTFT comprises a buffer layer, a gate, a first gate insulator layer, asecond gate insulator layer, and a metal oxide semiconductor layerstacked in that order on the substrate, and both a source electrode anda drain electrode coupled to the metal oxide semiconductor layer of thedriving TFT; and wherein the switch TFT comprises a buffer layer, agate, a second gate insulator layer, and a metal oxide semiconductorlayer stacked in that order on the substrate, and a source electrode anda drain electrode both coupled to the metal oxide semiconductor layer ofthe switch TFT.
 10. The display device of claim 9, wherein the arraysubstrate further comprises at least one poly-silicon TFT, eachpoly-silicon TFT comprises a poly-silicon semiconductor layer, a bufferlayer, a gate electrode, a first gate insulator layer, a second gateinsulator layer stacked on the substrate in order, and a sourceelectrode and a drain electrode passing through the buffer layer, thefirst gate insulator layer, and the second gate insulator layer andcoupled to the poly-silicon semiconductor layer.
 11. The display deviceof claim 10, wherein the array substrate further comprises a planarlayer formed on and covering all of the poly-silicon TFT, the switchTFTs, and the driving TFTs.
 12. The display device of claim 10, whereinthe driving circuit comprises a gate driver and a source driver, the atleast one poly-silicon TFT is positioned in the driving circuit.
 13. Thedisplay device of claim 10, wherein the at least one poly-silicon TFT ispositioned in at least one pixel unit.
 14. The display device of claim10, wherein the buffer layers of the poly-silicon TFTs, the switch TFTs,and the driving TFTs are defined by a single layer and are formed by asingle process, the first gate insulator layers of the poly-silicon TFTsand the driving TFTs are defined by a single layer and are formed by asingle process, the second gate insulator layers of the poly-siliconTFTs, the switch TFTs, and the driving TFTs are defined by a singlelayer and are formed by a single process.
 15. The display device ofclaim 9, wherein the metal oxide semiconductor layer of the driving TFTpartially covers the source electrode and the drain electrode of thedriving TFT.
 16. The display device of claim 9, wherein the metal oxidesemiconductor layer of the switch TFT partially covers the sourceelectrode and the drain electrode of the switch TFT.
 17. A method formaking an array substrate comprising: forming a poly-siliconsemiconductor layer on a substrate; forming a buffer layer on thepoly-silicon semiconductor layer and the substrate; depositing a firstmetal layer, and patterning the first metal layer to form a gateelectrode for a poly-silicon TFT, a gate electrode for a switch TFT, anda gate electrode for a driving TFT; forming a first gate insulator layercovering the gate electrode of the poly-silicon TFT, and the gateelectrode of the driving TFT; forming a second gate insulator layercovering the first gate insulator layer and the gate electrode of theswitch TFT; defining a first through hole and a second through holepassing through the buffer layer, the first gate insulator layer, andthe second gate insulator layer to expose the poly-silicon semiconductorlayer; depositing a metal oxide layer on the second gate insulator layerand patterning the metal oxide layer to form a metal oxide semiconductorlayer for the switch TFT and another metal oxide semiconductor layer forthe driving TFT; and depositing a second metal layer, and patterning thesecond metal layer to form a source electrode for the poly-silicon TFTin the first through hole and a drain electrode for the poly-silicon TFTin the second through hole, a source electrode and a drain electrodecoupled to the metal oxide semiconductor layer of the switch TFT, and asource electrode and a drain electrode both coupled to the metal oxidesemiconductor layer of the driving TFT.